Ge based semiconductor device and a method for manufacturing the same

ABSTRACT

A field effect transistor includes a channel made of germanium and a source/drain portion. The source/drain portion includes a germanium layer, an interfacial epitaxial layer over the germanium layer, a semiconductor layer over the interfacial epitaxial layer, and a conducting layer over the semiconductor layer. The interfacial epitaxial layer contains germanium and an element from the semiconductor layer and has a thickness in a range from about 1 nm to about 3 nm.

RELATED CASE

This application is a Divisional of U.S. patent application Ser. No.15/908,135 filed on Feb. 28, 2018, which claims priority to U.S.Provisional Application 62/585,232 filed Nov. 13, 2017, the entiredisclosure of the two applications are incorporated herein by reference.

TECHNICAL FIELD

The disclosure relates to a heterostructure or a semiconductor stackedstructure and transistor device having a silicon-germanium interface andmethod of manufacturing the same.

BACKGROUND

Germanium has four times higher mobility of charge carriers than that insilicon. Therefore, germanium is used in electronic device with lessvoltage applied to draw the charge carriers along circuits, i.e. lessenergy consumption. Germanium on silicon structures are widely used insemiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 shows a heterostructure used in a semiconductor device, accordingto an embodiment of the present disclosure.

FIGS. 2, 3, 4, and 5 show operations of forming the heterostructure ofFIG. 1.

FIG. 6 shows another heterostructure used in a semiconductor device,according to another embodiment of the present disclosure.

FIG. 7 shows another heterostructure used in a semiconductor device,according to another embodiment of the present disclosure.

FIGS. 8, 9, 10, 11, 12, and 13 show operations of forming theheterostructure of FIG. 7.

FIG. 14 shows a planar transistor device used in a semiconductor device,according to an embodiment of the present disclosure.

FIGS. 15, 16, 17, 18, 19, 20, and 21 show operations of forming theplanar transistor device of FIG. 14.

FIG. 22(a) shows a cross-sectional view of a fin structure for a finFET(fin field effect transistor) device that can be used in a semiconductordevice, according to an embodiment of the present disclosure, and theview is obtained by cutting along a gate stack of the finFET device.FIG. 22(b) shows a cross-sectional view of the finFET device by cuttingalong the source/drain region of the finFET.

FIGS. 23, 24, 25, 26, 27, 28, 29, 30 and 31 show operations of formingthe fin structure of FIGS. 22(a) and 22(b).

FIG. 32(a) shows a test structure of a linear transmission line model(linear TLM) simulation for measuring a contact resistivity of anembodiment of the present disclosure, and FIG. 32(b) shows a setup formeasuring the contact resistivity.

FIG. 33(a) shows a test structure of a circular transmission line model(circular TLM) simulation for measuring a contact resistivity of anembodiment of the present disclosure, and FIG. 33(b) shows a setup formeasuring the contact resistivity.

FIG. 34 shows an energy diagram of the interface of silicon andgermanium according to an embodiment of the present disclosure.

FIGS. 35(a) and 35(b) show embodiments of the present disclosure,demonstrating the effect of temperature on the interface of germaniumand silicon-germanium.

FIG. 36 shows the interfaces between the phosphorus doped silicon (Si:P)and germanium (Ge) layer of an embodiment of the disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“being made of” may mean either “comprising” or “consisting of” In thepresent disclosure, a phrase “one of A, B and C” means “A, B and/or C”(A, B, C, A and B, A and C, B and C, or A, B and C), and does not meanone element from A, one element from B and one element from C, unlessotherwise described.

For Si on Ge structures, the as-grown dislocation density is normally inthe range of 10⁹ to 10¹⁰ cm⁻², which makes practical applications of theSi on Ge structure difficult. An annealing process may be used in theepitaxial reactor following the growth of a Si layer to reduce thedislocation. With the advancement of technology to the nanometer node,the thermal budget in a semiconductor manufacturing operation becomessmaller and smaller, which may prevent the use of an annealing processafter Si layer growth. Thus, there is a demand for a highly efficientheterostructure or transistor device having an interface of germaniumand silicon. In the present disclosure, methods for manufacturing asemiconductor device having improved interfacial properties between Siand Ge are disclosed.

FIG. 1 shows a heterostructure or a stacked semiconductor structureaccording to an embodiment of the present disclosure. In someembodiments, the heterostructure is a source/drain structure of a fieldeffect transistor (FET). In FIG. 1, a heterostructure is disposed on asubstrate 100. In some embodiments, the substrate 100 includes a singlecrystalline semiconductor layer on at least its surface portion. Thesubstrate 100 may include a single crystalline semiconductor materialsuch as, but not limited to Si, Ge, SiGe, GaAs, InSb, GaP, GaSb, InAlAs,InGaAs, GaSbP, GaAsSb and InP. In certain embodiments, the substrate 100is made of crystalline silicon.

The heterostructure includes a first semiconductor layer 110, a firstinterfacial epitaxial layer 120, a second interfacial epitaxial layer130, a second semiconductor layer 140, and a conducting metallic contactlayer 150. The first semiconductor layer 110 is disposed over thesubstrate 100 as a fin structure. The first semiconductor layer 110includes a germanium layer. In some embodiments, the germanium layer isdoped with an n-type dopant, such as phosphorus, to increase the numberof charge carriers and enhance the coupling between the firstsemiconductor layer 110 and the conducting metallic contact layer 150.

The first semiconductor layer 110 can be a phosphorus doped germaniumlayer. In some embodiments, one or more buffer layers are disposedbetween the Si substrate 100 and the Ge first semiconductor layer 110 torelax the lattice mismatch between Ge and Si.

The second semiconductor layer 140 includes a silicon layer in someembodiments. Also, the second semiconductor layer 140 is doped by n-typedopants to increase the charge carrier concentrations, and the n-typedopant includes phosphorus in certain embodiments. In this way, thesecond semiconductor layer 140 can be a phosphorus doped silicon layer.The P doped Si layer can reduce contact resistance at the interfacebetween the conducting metallic contact layer 150 and the secondsemiconductor layer 140.

The first interfacial epitaxial layer 120 and the second interfacialepitaxial layer 130 are disposed on the first semiconductor layer 110. Asecond semiconductor layer 140 is disposed on the interfacial epitaxiallayers 120 and 130. In some embodiments, the first interfacial epitaxiallayer 120 includes the elements of the first semiconductor layer 110 andthe second semiconductor layer 140. In some embodiments, the firstinterfacial epitaxial layer 120 is a SiGe layer disposed on the firstsemiconductor layer 110 of phosphorus doped germanium layer and disposedbelow the second semiconductor layer 140 of phosphorus doped silicon.

In some embodiments, the second interfacial epitaxial layer 130 includesthe elements of the first semiconductor layer 110 and the secondsemiconductor layer 140. In some embodiments, the second interfacialepitaxial layer 130 is a SiGe layer disposed over the first interfacialepitaxial layer 120 and disposed below the second semiconductor layer140 of phosphorus doped silicon layer. In some embodiments, the firstinterfacial epitaxial layer 120 is a SiGe layer and the secondinterfacial epitaxial layer 130 is a SiGe layer. In some embodiments,the composition of the SiGe layer of the first interfacial epitaxiallayer 120 is different from the composition of the SiGe layer of thesecond interfacial epitaxial layer 130. In certain embodiments, thefirst interfacial epitaxial layer 120 is a Si_(x)Ge_(1-x) layer and thesecond interfacial epitaxial layer 130 is a Si_(y)Ge_(1-y) layer, wherexis not equal toy. In some embodiments, the first interfacial epitaxiallayer 120 is a Si_(x)Ge_(1-x) layer and the second interfacial epitaxiallayer 130 is a Si_(y)Ge_(1-y) layer, where x is less than y. In someembodiments, 0.1≤x≤0.5 and 0.4≤y≤0.8, where x<y. In certain embodiments,the first interfacial epitaxial layer 120 is a Si_(0.3)Ge_(0.7) layer,and the second interfacial epitaxial layer 130 is a Si_(0.6)Ge_(0.4)layer. In some embodiments, either the first interfacial epitaxial layer120 or the second interfacial epitaxial layer 130 is not used.

In some embodiments, one interfacial epitaxial layer having acomposition Si_(z)Ge_(1-z) is disposed between the first semiconductorlayer 110 and the second semiconductor layer 140, and z changes(increases) from the first semiconductor layer 110 toward the secondsemiconductor layer 140.

The contact layer 150 is formed of a conductive metallic layer or anelectrically conducting layer, including one or more of Co, Ni, W, Ti,Ta, Cu, Al, Mo, TiN, TaN, WSi₂, Ni—Si, Co—Si, WN, TiAlN, TaCN, TaC,TaSiN, metal alloys such as Ti—Al alloy, Al Cu alloy, other suitablematerials, and/or combinations thereof.

FIGS. 2, 3, 4, and 5 show operations of forming the structure of theembodiment shown by FIG. 1. In FIG. 2, the first semiconductor layer 110is formed over the substrate 100 by a deposition method, such aschemical vapor deposition (CVD), including low pressure CVD (LPCVD) andplasma enhanced CVD (PECVD), atomic layer deposition (ALD), physicalvapor deposition (PVD), such as pulsed laser deposition (PLD),sputtering, evaporative deposition, or other suitable process. The firstsemiconductor layer 110 is formed to a thickness to reduce stress/strainin some embodiments. For example, but not limited to, the firstsemiconductor layer 110 is formed to have a thickness of 2 nm to 20 nmin some embodiments. The first semiconductor layer 110 includes agermanium layer, in some embodiments. Also, the first semiconductorlayer 110 is doped by an n-type dopant to increase the charge carrierconcentrations, and the n-type dopant includes phosphorus, in certainembodiments. The doping operation can be carried out by in-situ dopingduring deposition of the first semiconductor layer and/or ionimplantation. In this way, the first semiconductor layer 110 can be aphosphorus doped germanium layer.

In FIG. 3, the first interfacial epitaxial layer 120 is formed on thefirst semiconductor layer 110 by vapor-phase epitaxy (VPE), chemicalvapor deposition, molecular-beam epitaxy (MBE), liquid-phase epitaxy(LPE), atomic layer deposition (ALD) or other suitable methods. In someembodiments, the first interfacial epitaxial layer 120 includes theelements of the first semiconductor layer 110 and the secondsemiconductor layer 140. In some embodiments, the first interfacialepitaxial layer 120 is a SiGe layer disposed on the first semiconductorlayer 110 of phosphorus doped germanium layer and disposed under thesecond semiconductor layer 140 of phosphorus doped silicon layer.

Also, the second interfacial epitaxial layer 130 is optionally formed onthe first interfacial epitaxial layer 120 by vapor-phase epitaxy (VPE),chemical vapor deposition, molecular-beam epitaxy (MBE), liquid-phaseepitaxy (LPE), atomic layer deposition (ALD) or other suitable methods.The second interfacial epitaxial layer 130 is formed by the same methodas the first interfacial epitaxial layer 120 in some embodiments. Insuch a case, the second interfacial epitaxial layer 130 is continuouslyformed after the growth of the first interfacial epitaxial layer 120 inthe same deposition chamber, in some embodiments. In other embodiments,the second interfacial epitaxial layer 130 is formed by a differentmethod than the first interfacial epitaxial layer 120.

In FIG. 4, the second semiconductor layer 140 is formed on the secondinterfacial epitaxial layer 130 by a deposition method such as chemicalvapor deposition (CVD), including low pressure CVD (LPCVD) and plasmaenhanced CVD (PECVD), atomic layer deposition (ALD), physical vapordeposition (PVD), such as pulsed laser deposition (PLD), sputtering,evaporative deposition, or other suitable process. Each of the aboveinterfacial epitaxial layers 120 and 130 and the second semiconductorlayer 140 is formed in the same chamber as the first semiconductor layer110, in some embodiments. In other embodiments, the second semiconductorlayer 140 is formed in a different chamber than the first semiconductorlayer 110, in some embodiments. The second semiconductor layer 140 isformed to a thickness to reduce stress/strain in the structure. Forexample, but not limited to, the second semiconductor layer 140 isformed to have a thickness of about 2 nm to about 20 nm in someembodiments. The second semiconductor layer 140 includes a siliconlayer, in some embodiments. Also, the second semiconductor layer 140 isdoped by an n-type dopant to increase the charge carrier concentrations,and the n-type dopant includes phosphorus, in certain embodiments. Thedoping operation can be carried out by in-situ deposition or ionimplantation. In this way, the second semiconductor layer 140 can be aphosphorus doped silicon layer. The P doped Si layer can reduce contactresistance at the interface between the conducting metallic contactlayer 150 and the second semiconductor layer 140.

In FIG. 5, a conducting metallic contact layer 150 is formed over thesubstrate 100 by a deposition method, such as chemical vapor deposition(CVD), including low pressure CVD (LPCVD) and plasma enhanced CVD(PECVD), atomic layer deposition (ALD), physical vapor deposition (PVD)such as pulsed laser deposition (PLD), sputtering, evaporativedeposition, cathodic arc deposition, e-beam physical vapor deposition,or other suitable process. The conducting metallic contact layer 150 isformed of a conducting metal layer or an electrically conducting layerincluding an element other than a metal, including one or more of Co,Ni, W, Ti, Ta, Cu, Al, Mo, TiN, TaN, WSi₂, Ni—Si, Co—Si, WN, TiAlN,TaCN, TaC, TaSiN, metal alloys such as Ti—Al alloy, Al—Cu alloy, othersuitable materials, and/or combinations thereof.

FIG. 6 shows another heterostructure or semiconductor stacked structureused in a semiconductor device according to another embodiment of thepresent disclosure. In FIG. 6, there are more than two interfaciallayers between the first semiconductor layer 110 and the secondsemiconductor layer 140. In the embodiment of FIG. 6, between the firstsemiconductor layer 110 and the second semiconductor layer 140, two ormore other interfacial epitaxial layers having the same or differentamounts of constituent elements Si or Ge as the first and secondinterfacial epitaxial layers 120 and 130 are formed. Also, for example,but not limited to, between the first semiconductor layer 110 and thesecond semiconductor layer 140, a superlattice structure of 130 on 120on 130 on 120, etc. is formed. The superlattice structure can also bewritten in a form of 130/(120/130)_(N)/120, where N is a natural numberindicating the number of double-layers. Alternatively, a stackedstructure of 130 on 130 on 120 on 120 (or 130/130/120/120) is formed insome embodiments. A mixed structure of 130 _(M)/(120/130)_(N)/120 _(M)can also be formed, where M is a natural number that can be the same asor different from N. Also, multilayers having modified compositions 130/. . . 123/133/122/132/121/131/120 with layers 121, 122, 123, etc. havingvaried compositions compared with the composition of the interfacialepitaxial layer 120 as formed in some embodiments. Similarly, theinterfacial epitaxial layers 131, 132, 133, etc. have variedcompositions compared with the composition of the interfacial epitaxiallayer 130 in some embodiments. A compositional grading structure canalso be formed using this multi-layered structure, such as, for example,the amount of Si increases from the interfacial epitaxial layer 120toward the interfacial epitaxial layer 130, and the amount of Gedecreases from the interfacial epitaxial layer 120 toward theinterfacial epitaxial layer 130. Also, in some embodiments, theinterfacial epitaxial layer 120 or 130 has a composition graduallychanging along a thickness direction of the interfacial epitaxial layer.Any combination of any number of additional interfacial layers 120 or130 is inserted between the first interfacial epitaxial layer 120 andthe second interfacial epitaxial layer 130, as understood by one ofordinary skill in the art. This modification of inserting additionalinterfacial layers in any stacking sequence or compositional combinationapplies to any of the embodiments disclosed herein.

FIG. 7 shows another heterostructure or semiconductor stacked structureused in a semiconductor device, according to another embodiment of thepresent disclosure. The heterostructure includes a patterned firstsemiconductor layer 110, a first interfacial epitaxial layer 120, asecond interfacial epitaxial layer 130, a second semiconductor layer140, and a conducting metallic contact layer 150. The first interfaciallayer 120 is disposed on and completely covers the upper and side facesof the patterned first semiconductor layer 110, and contacts thesubstrate 100. The second interfacial layer 130 is disposed on andcompletely covers the upper and side faces of the first interfaciallayer 110, and contacts the substrate 100. The second semiconductorlayer 140 is disposed on and completely covers the upper and side facesof the second interfacial layer 130, and contacts the substrate 100. Theconducting metallic contact layer 150 is disposed on and completelycovers the upper and side faces of the second semiconductor layer 140,and contacts the substrate 100.

In FIG. 7, the heterostructure is disposed on the substrate 100 formedof the same materials described above relating to the embodiments ofFIG. 1 or 6. The materials used to form the layers 110, 120, 130, 140,and 150 are described above relating to the embodiments of FIG. 1 or 6and will not be repeatedly described.

FIGS. 8, 9, 10, 11, 12, and 13 show operations of forming theheterostructure of FIG. 7. FIG. 8 shows the substrate 100. In FIG. 9,the first semiconductor layer 110 is formed over the substrate 100 by adeposition method, such as chemical vapor deposition (CVD), includinglow pressure CVD (LPCVD) and plasma enhanced CVD (PECVD), atomic layerdeposition (ALD), physical vapor deposition (PVD) such as pulsed laserdeposition (PLD), sputtering method, evaporative deposition, or othersuitable process. Also, the first semiconductor layer 110 can be formedby an epitaxy method, such as vapor-phase epitaxy (VPE), molecular-beamepitaxy (MBE), atomic layer deposition (ALD) and liquid-phase epitaxy(LPE). The first semiconductor layer 110 is formed to a thickness toreduce stress/strain in the structure. For example, but not limited to,the first semiconductor layer 110 is formed to a thickness of 2 nm to 20nm in some embodiments. In some embodiments, the first semiconductorlayer 110 is formed of a semiconductor doped with a dopant by an in-situdeposition method or by an ion implantation method.

In FIG. 10, the first semiconductor layer 110 formed in the operationshown in FIG. 13 is patterned by photolithographic etching method. Thedimension of the patterned first semiconductor layer 110 is tailored fordevice components such as an electrode line of a memory device, such asa bit line or a word line of a random access memory (RAM), or asource/drain portion of a planar or non-planar (e.g., fin) transistor.

In FIG. 11, the first interfacial epitaxial layer 120 is formed on thesubstrate 100 by vapor-phase epitaxy (VPE), chemical vapor deposition,molecular-beam epitaxy (MBE), liquid-phase epitaxy (LPE), atomic layerdeposition (ALD) or other suitable methods. The second interfacialepitaxial layer 130 is also disposed on the first semiconductor layer110. The second interfacial epitaxial layer 130 is formed on the firstinterfacial epitaxial layer 120 by any of the above epitaxy methods. Insome embodiments, the second interfacial epitaxial layer 130 is formedby the same method as the first interfacial epitaxial layer 120. In sucha case, the second interfacial epitaxial layer 130 is continuouslyformed after the growth of the first interfacial epitaxial layer 120 inthe same deposition chamber. Also, the second interfacial epitaxiallayer 130 is formed by a different method than the first interfacialepitaxial layer 120. The formed first and second interfacial layers 120and 130 are patterned by photolithographic and etching methods.

In FIG. 12, the second semiconductor layer 140 is formed on thesubstrate 100 by any of the above described methods and techniques usedfor deposition and doping of the first semiconductor layer 110. Theformed second semiconductor layer 140 is patterned by photolithographicand etching methods including UV photolithography, to remove theportions contacting the substrate 100 but not removing portions coveringthe second interfacial epitaxial layer 130, as shown in FIG. 12.

In FIG. 13, a conducting metallic contact layer 150 is formed on thesubstrate 100 by a deposition method, such as chemical vapor deposition(CVD), including low pressure CVD (LPCVD) and plasma enhanced CVD(PECVD), atomic layer deposition (ALD), physical vapor deposition (PVD)such as pulsed laser deposition (PLD), sputtering, evaporativedeposition, cathodic arc deposition, e-beam physical vapor deposition orother suitable process. The conducting metallic contact layer 150 formedon the second semiconductor layer 140 is patterned by photolithographicand etching methods to remove the portions contacting the substrate 100and not covering the second interfacial epitaxial layer 140, as shown inFIG. 13.

FIG. 14 shows a planar transistor device used in a semiconductor device,according to an embodiment of the present disclosure. In FIG. 14, theplanar transistor is formed on a substrate 100 formed of any of theabove described materials relating to the embodiment of FIG. 1. Theplanar transistor includes a germanium layer 110 for a germanium channelfor charge carrier transport in the transistor. The germanium layer 110is disposed on a SiGe buffer layer on the substrate 100. The germaniumlayer 110 includes diffusion regions (indicated as “Ge:P (S/D)” whichstands for phosphorus doped germanium source/drain region) as source anddrain regions of the transistor. The diffusion regions are formed bydoping the germanium layer 110 by ion implantation. The planartransistor further includes an isolation insulating layer which is alsocalled a shallow trench isolation (STI) layer. The isolation insulatinglayer is made of suitable dielectric materials such as silicon oxide,silicon nitride, silicon oxynitride, fluorine-doped silicate glass(FSG), low-k dielectrics such as carbon doped oxides, extremely low-kdielectrics such as porous carbon doped silicon dioxide, a polymer suchas polyimide, combinations of these.

The planar transistor further includes a second interfacial epitaxiallayer 130 stacked on a first interfacial epitaxial layer 120 which isdisposed on the Ge:P S/D region. The planar transistor further includesa second semiconductor layer 140 disposed on the second interfacialepitaxial layer 130.

Between the source and drain regions, the planar transistor includes agate stack which is formed of a gate dielectric layer 210 on thegermanium layer 110 at a channel region between the Ge:P S/D regions,and a gate electrode layer 220. The gate electrode layer 220 may be asingle layer or multilayer structure. In the present embodiment, thegate electrode layer 220 is poly-silicon. Further, the gate electrodelayer 220 is doped poly-silicon with uniform or non-uniform doping, insome embodiments. In some alternative embodiments, the gate electrodelayer 220 include a metal, such as Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlN,TaN, NiSi, CoSi, other conductive materials with a work functioncompatible with the substrate material, or combinations thereof. In thepresent embodiment, the gate electrode layer 220 has a thickness in arange of 20 nm to 100 nm.

In some embodiments, the gate dielectric layer 210 includes siliconoxide, silicon nitride, silicon oxy-nitride, or high-k dielectrics.High-k dielectrics comprise metal oxides. Examples of metal oxides usedfor high-k dielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr,Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/ormixtures thereof. In the present embodiment, the gate dielectric layer210 is a high-k dielectric layer with a thickness in the range of about1 to about 5 nm. The gate dielectric layer 210 may further include aninterfacial layer (not shown) to reduce damage between the gatedielectric layer 210 and channel of the first semiconductor layer 110.The interfacial layer includes silicon oxide in some embodiments.

The gate stack is surrounded by sidewall spacers 230 which separates thegate stack from the source and drain regions. The sidewall spacers 230includes one or more of SiN, SiON, SiCN, SiCO, SiOCN or any othersuitable dielectric material.

The planar transistor is covered by an interlayer dielectric (ILD) layerin which through holes are formed, and contacts 150 are formed byfilling the through holes with conductive material. The materials forthe ILD layer include compounds comprising Si, O, C and/or H, such assilicon oxide, SiCOH and SiOC. Organic materials, such as polymers, maybe used for the ILD layer. The materials used to form the layers 120,130, 140, and 150 are any of the materials described above for the otherembodiments (e.g. the embodiment in FIG. 7) of the present disclosure.

FIGS. 15, 16, 17, 18, 19, 20, and 21 show operations of forming theplanar transistor device of FIG. 14. In FIG. 15, a first semiconductorlayer 110 which is a germanium layer for a germanium channel for chargecarrier transport of the transistor is formed on a SiGe buffer layer onthe substrate 100. Then, shallow trench isolation (STI) layers, whichare also called isolation insulating layers, are formed through aprocess such as CVD, flowable CVD (FCVD), or a spin-on-glass process,although any acceptable process may be utilized.

A gate stack is formed on the first semiconductor layer 110, and thegate stack includes gate dielectric layer 210 and gate electrode layer220. The gate dielectric layer 210 is formed using a suitable processsuch as physical vapor deposition (PVD), chemical vapor deposition(CVD), atomic layer deposition (ALD), thermal oxidation, UV-ozoneoxidation, or combinations thereof. The gate electrode layer 220 can beformed by using CVD, including LPCVD and PECVD, PVD, ALD, or othersuitable process. The formed gate electrode layer 220 and the gatedielectric layer 210 are patterned by photolithographic and etchingmethods.

FIG. 16 shows an operation to form diffusion regions (indicated as “Ge:P(S/D)” which stands for phosphorus doped germanium source/drain region)at source and drain regions in the germanium layer 110. The potentialwells are formed by doping the germanium layer 110 by ion implantation,and using the gate electrode layer 220 as a mask, in some embodiments.The potential wells are also formed by doping the germanium layer 110during an epitaxial process in which phosphorus is co-flowed with GeH₄or Ge₂H₆ during MOCVD, in some embodiments. The dopant concentration isin a range from about 5×10¹⁷ to about 5×10¹⁹ cm⁻³ in some embodiments.

FIG. 17 shows an operation of forming the sidewall spacer 230surrounding the gate stack. The sidewall spacer 230 can be formed by ALDor CVD, or any other suitable method.

FIG. 18 shows an operation of forming the first interfacial epitaxiallayer 120 and second interfacial epitaxial layer 130 on the firstsemiconductor layer 110 by an epitaxy method such as, vapor-phaseepitaxy (VPE), chemical vapor deposition, molecular-beam epitaxy (MBE),liquid-phase epitaxy (LPE), atomic layer deposition (ALD) or othersuitable methods.

FIG. 19 shows an operation of forming a second semiconductor layer 140on the second interfacial epitaxial layer 130 by CVD, including LPCVDand PECVD, PVD, ALD, or other suitable process, such as epitaxy methodsincluding vapor-phase epitaxy (VPE), chemical vapor deposition,molecular-beam epitaxy (MBE), liquid-phase epitaxy (LPE).

FIG. 20 shows an operation of forming an interlayer dielectric (ILD)layer over the embodiment of FIG. 19 by deposition techniques, such aschemical vapor deposition (CVD) including LPCVD (low pressure chemicalvapor deposition), plasma-CVD and flowable CVD, pulsed laser deposition(PLD) such as pulsed laser deposition or a sputtering method such asradio frequency (rf)-sputtering, and atomic layer deposition (ALD).

FIG. 21 shows an operation of etching the ILD layer by photolithographicand etching methods to form two through holes at the source and drainregions of the transistor. A conducting metallic contact layer 150 isformed by filling the through holes.

FIGS. 22(a) and 22(b) show side views, by cutting through a gate stackand by cutting through a source/drain region, respectively, of a finFET(fin field effect transistor) device used in a semiconductor device,according to an embodiment of the present disclosure. The fin structureis formed on a substrate 100 formed of any of the materials describedabove in relation to FIG. 1. The fin structure includes a firstsemiconductor layer 110, a first interfacial epitaxial layer 120, asecond interfacial epitaxial layer 130, a second semiconductor layer140, and a contact layer 150 sequentially formed over the fin structure110. An insulating layer 180 is disposed between the fin structures(first semiconductor layers) 110. The fin structures 110 protrude fromthe substrate 100. The materials used to form the layers 110, 120, 130,140, 150 and 180 can be any of the materials used to form the layers110, 120, 130, 140, and 180 in the embodiment of FIG. 14. For indicationpurpose, in FIG. 22(b), the position of the gate stack is shown usingdotted line.

The finFET also includes a gate electrode layer 220 formed on a gatedielectric layer 210 as shown in FIG. 22(a). In at least one embodiment,the gate electrode layer 220 covers the upper portion (channel region)of more than one fin of the first semiconductor layer 110. The finaltransistor is a multi-fin transistor or, in some alternativeembodiments, each of the upper portions of the first semiconductor layer110 is used to form a separate finFET. In some embodiments, the gateelectrode layer 220 includes a single layer or multilayer structure. Insome embodiments, the gate electrode layer 220 includes poly-silicon.Further, the gate electrode layer 220 is doped poly-silicon with uniformor non-uniform doping, in other embodiments. In some alternativeembodiments, the gate electrode layer 220 includes a metal such as Al,Cu, W, Ti, Ta, TiN, TiAl, TiAlN, TaN, NiSi, CoSi, other conductivematerials with a work function compatible with the substrate material,or combinations thereof. In the present embodiment, the gate electrodelayer 220 has a thickness in the range from about 20 nm to about 100 nm.

FIGS. 23, 24, 25, 26, 27, 28, 29, 30, and 31 show operations of formingthe finFET of FIGS. 22(a) and 22(b). FIG. 23 shows the first and secondmask layers 190 and 200 are formed over the first semiconductor layer110. The first mask layer 190 is a pad oxide layer made of a siliconoxide, which can be formed by a thermal oxidation. The second mask layer200 is made of a silicon nitride (SiN), which is formed by chemicalvapor deposition (CVD), including low pressure CVD (LPCVD) and plasmaenhanced CVD (PECVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), or other suitable process. A photoresist layer (notshown) is formed and patterned on the mask layers 190 and 200. FIG. 23shows the mask layers 190 and 200 patterned into a mask pattern by usingpatterning operations including photo-lithography and etching.

In FIG. 24, the first semiconductor layer 110 is patterned by anysuitable method including one or more photolithography processes,including double-patterning or multi-patterning processes. Thedouble-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. The first semiconductor layer110 is subsequently etched by a plasma dry and/or wet etching methods toform fin structures in some embodiments.

FIG. 25 shows an insulating layer 180 is formed over the entire finstructures by a deposition technique, such as chemical vapor deposition(CVD) including LPCVD (low pressure chemical vapor deposition),plasma-CVD and flowable CVD, pulsed laser deposition (PLD) such aspulsed laser deposition, or a sputtering method, such as radio frequency(rf)-sputtering, and atomic layer deposition (ALD).

FIG. 26 shows a chemical and mechanical polishing (CMP) operation iscarried out to remove the first and second mask layers 190 and 200. FIG.27 shows a selective etching operation is carried out to reduce thethickness of the insulating layer 220 to expose the fin structure. Theetching step is performed using a wet etching process, for example, bydipping the sample in FIG. 26 in hydrofluoric acid (HF) in someembodiments. In other embodiments, the etching step is performed using adry etching process, for example, a dry etching process using CHF₃ orCF₄ as etching gases.

FIG. 28 is a cross sectional view cutting a gate structure andillustrates a gate stack formed over the fin structures of the firstsemiconductor layer 110. First, a gate dielectric layer 210 is formedover the fin structures, and then a gate electrode layer 220 is formedover the gate dielectric layer 210. Then, both layers of 210 and 220 arepatterned to expose source and drain regions the fin structure of thefirst semiconductor layer 110. In some embodiments, the exposed finstructure (S/D regions) of the first semiconductor layer 110 undergoes adoping operation with a dopant such as an n-type dopant, includingphosphorus to increase the number of charge carriers in the source anddrain regions. The doping operation can be carried out by ionimplantation.

In some embodiments, the gate dielectric layer 210 includes siliconoxide, silicon nitride, silicon oxy-nitride, or high-k dielectrics.High-k dielectrics comprise metal oxides. Examples of metal oxides usedfor high-k dielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr,Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/ormixtures thereof. In the present embodiment, the gate dielectric layer210 is a high-k dielectric layer with a thickness in a range from about1 to about 5 nm. The gate dielectric layer 210 is formed using asuitable process such as physical vapor deposition (PVD), chemical vapordeposition (CVD), atomic layer deposition (ALD), thermal oxidation,UV-ozone oxidation, or combinations thereof. The gate dielectric layer210 may further comprise an interfacial layer (not shown) to reducedamage between the gate dielectric layer 210 and channel fin of thefirst semiconductor layer 110. The interfacial layer may comprisesilicon oxide.

The gate electrode layer 220 is formed over the gate dielectric layer210 using a suitable process, such as chemical vapor deposition (CVD),including low pressure CVD (LPCVD) and plasma enhanced CVD (PECVD),physical vapor deposition (PVD), atomic layer deposition (ALD), or othersuitable process, electroplating, or combinations thereof.

FIGS. 29, 30, and 31 show operations at a cross-sectional line at thesource/drain region which is away from the gate stack region. Forindication purpose, the position of the gate stack is shown using dottedline.

FIG. 29 shows a cross sectional view cutting the source/drain regionsand illustrates that a first interfacial epitaxial layer 120 is grown onthe exposed fin structure (S/D regions) and over the insulating layer180. In some embodiments, the first interfacial epitaxial layer 120 isselectively grown over the exposed fin structure and is not formed onthe insulating layer 180. The first interfacial epitaxial layer 120 isgrown to have a thickness of about 1 nm to about 3 nm, and is grown byvapor-phase epitaxy (VPE), chemical vapor deposition, molecular-beamepitaxy (MBE), liquid-phase epitaxy (LPE), atomic layer deposition (ALD)or other suitable methods in some embodiments. The range of thickness ofthe first interfacial epitaxial layer 120 is limited by the pitchbetween the fins. That is, if the fin pitch is too small, the firstinterfacial epitaxial layer 120 cannot be formed into a thick film.

FIG. 30 shows an operation of forming a second interfacial epitaxiallayer 130 on the first interfacial epitaxial layer 120 to a thickness ofabout 1 nm to about 3 nm, and is grown by vapor-phase epitaxy (VPE),chemical vapor deposition, molecular-beam epitaxy (MBE), liquid-phaseepitaxy (LPE) or other suitable methods. The range of total thickness ofthe first interfacial epitaxial layer 120 and the second interfacialepitaxial layer 130 is limited by the pitch between the fins. That is,if the fin pitch is too small, the first interfacial epitaxial layer 120or the second interfacial epitaxial film 130 cannot be formed into athick film. Also, a second semiconductor layer 140 is formed on thesecond interfacial epitaxial layer 130. The second semiconductor layer140 can be formed by any one of the methods used for deposition anddoping of the first semiconductor layer 110.

FIG. 31 shows an operation of forming a contact layer or a conductivelayer 150 over the second semiconductor layer 140. The contact layer 150is formed over the substrate 100 by a deposition method, such aschemical vapor deposition (CVD), including low pressure CVD (LPCVD) andplasma enhanced CVD (PECVD), atomic layer deposition (ALD), physicalvapor deposition (PVD) such as pulsed laser deposition (PLD),sputtering, evaporative deposition, cathodic arc deposition, e-beamphysical vapor deposition, or other suitable process.

For the purpose of evaluation the quality of interface between Ge and Siin the heterostructure or the semiconductor stacked layer fabricatedaccording to the above embodiments, the sheet resistance is measured bya four-point probe method in which two probes with a gap spacing g of avoltmeter are applied to a surface of a sample while one of the probesfor applying a DC current contacts a point of the surface at a gapspacing g to the left of the left probe of the voltmeter and the otherone of the probes for applying the DC current to the surface contactsanother point of the surface at a gap spacing g to the right of theright probe of the voltmeter. When the thickness of the measured layeror the total thickness of the measured layers is much smaller than theplanar size of the measured surface, the sheet resistance in units ofΩ/□ is proportional to the measured voltage V divided by the appliedcurrent I. In other words, the linearly-fitted slope of a plot of Vversus I, when multiplied by a correction factor, results in the sheetresistance, and resistivity is obtained by multiplying the sheetresistance with the thickness of the measured layer or multilayer.

Samples subject to the four-point probe method include phosphorus dopedgermanium (Ge:P), phosphorus doped silicon (Si:P) on Ge:P,Se_(1-x)Ge_(x) (x=0.4-0.7) layer on Ge:P, two Se_(1-x)Ge_(x) (x=0.4-0.7)layers of different compositions on Ge:P, Si:P on Se_(1-x)Ge_(x)(x=0.4-0.7) layer on Ge:P, Si:P on two Se_(1-x)Ge_(x) (x=0.4-0.7) layersof different compositions on Ge:P, TiN on Si:P on Ge:P, TiN on Si:P on aSe_(1-x)Ge_(x) (x=0.4-0.7) layer on Ge:P, and TiN on Si:P on twoSe_(1-x)Ge_(x) (x=0.4-0.7) layers of different compositions on Ge:P.

To measure the contact resistivity, a linear transmission line model(linear TLM) is used, in some embodiments. The method is used to measuresheet resistance and contact resistance. FIGS. 32(a) and 32(b) show thelinear transmission line model test structure. In the test structure,phosphorus doped germanium layer or phosphorus doped germanium substrate3200 is first formed. Then, the phosphorus doped silicon layer is formedand patterned to be patterned layers 3201 in some embodiments. Also, insome embodiment, the pattern layer 3201 is a phosphorus doped siliconlayer (Si:P) on a Se_(1-x)Ge_(x) (x=0.4-0.7) layer, a phosphorus dopedsilicon layer (Si:P) on two Se_(1-x)Ge_(x) (x=0.4-0.7) layers ofdifferent compositions, TiN on Si:P, TiN on Si:P on a Se_(1-x)Ge_(x)(x=0.4-0.7) layer, and TiN on Si:P on two Se_(1-x)Ge_(x) (x=0.4-0.7)layers of different compositions.

In the linear TLM test structure, the pattern layers 3201 are formed tohave the same size, in some embodiments. The gap spacings d₁, d₂, d₃,and d₄ between the pattern layers are formed to be different so as toprovide data points for linear fitting. An insulating material isdeposited to fill the gaps as insulating layers 3202 between adjacentpattern layers 3201. The insulating layer 3202 is composed of, but notlimited to, silicon oxide (SiO₂), silicon nitride (Si₃N₄), siliconoxynitride (SiON), SiOCN, SiCN, Al₂O₃, fluorine-doped silicate glass(FSG), a low-k dielectric material, or various other suitable dielectricmaterials used in manufacturing semiconductor devices. The insulatinglayer 3202 disposed over the germanium layer 3200 is an electrical andthermal insulator, and has a thickness in a range from about 5 to about350 nm in some embodiments.

A linearly-fitted plot of measured resistances versus measured gapspacings d₁, d₂, and d₃ can be obtained, and the extrapolation resultsin y-intercept value of two times contact resistance. Because of thevarious gap spacings d₁, d₂, and d₃, this linear transmission line model(TLM) method is less sensitive to misalignment and is more suitable fornon-uniform contact resistances. However, this linear transmission linemodel can be affected by parasitic current in regions not isolated bythe insulating material filling the gap spacings d₁, d₂, and d₃.

FIGS. 33(a) and 33(b) show another test structure for a circulartransmission line model (circular TLM) method. In the test structure ofcircular TLM, a phosphorus doped germanium layer 3300 is formed and thephosphorus doped silicon layer is patterned to have pattern layers 3301and concentric ring grooves filled with an insulating material 3302 insome embodiments. Also, in some embodiments, the pattern layer 3301 is aphosphorus doped silicon layer (Si:P) on a Se_(1-x)Ge_(x) (x=0.4-0.7)layer, a phosphorus doped silicon layer (Si:P) on two Se_(1-x)Ge_(x)(x=0.4-0.7) layers of different compositions, TiN on Si:P, TiN on Si:Pon a Se_(1-x)Ge_(x) (x=0.4-0.7) layer, and TiN on Si:P on twoSe_(1-x)Ge_(x) (x=0.4-0.7) layers of different compositions.

In the circular ring gap spacings between the patterns, an insulatingmaterial is deposited to fill the gap spacings to form insulating ringpatterns 3302. The insulating ring patterns 3302 are formed to have samewidth and have same spacing from adjacent rings 3302. Thus, circular TLMhas a higher precision requirement than linear TLM in some embodiments.The insulating ring patterns 3302 are composed of, but not limited to,silicon oxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride(SiON), SiOCN, SiCN, Al₂O₃, fluorine-doped silicate glass (FSG), a low-kdielectric material, or various other suitable dielectric materials usedin manufacturing semiconductor devices. The insulating ring pattern 3302disposed over the germanium layer 3300 is an electrical and thermalinsulator, and has a thickness in a range from about 5 to about 350 nmin some embodiments. In the circular TLM test structure, the conductingpatterns 3301 are completely isolated from each other by insulating ringpatterns 3302 and parasitic current along non-isolated regions does notoccur. When the diameter D of the central pattern 3301 is much greaterthan the adjacent gap spacing d, the ring geometry can be reduced to alinear transmission line model and without perturbation by the parasiticcurrent in non-isolated regions, with a correction factor ofC=(D/2d)ln[(l_(t)+2d)/D], where l_(t) is the resistance-spacinglinear-fit's x-intercept value called ‘transfer length’, which is thecarrier transfer distance in the measured sample.

The circular TLM method structures are used to measure the specificcontact resistance of a metal on Si:P on Ge:P junction. Lowering thetemperature from 390° C. to 350° C. decreases the contact resistance by32%. Also, introducing the SiGe interfacial epitaxial layer furtherimproves the contact resistance. Table 1 below shows the data obtainedby evaluating the samples of the embodiments of the present disclosure.

TABLE 1 R_(□) d μ Ns (Ω/□) (nm) (cm²/Vs) (cm⁻³) Si:P on Si 335 10 31 5.5× 10²⁰ Si:P on Ge at 390° C. Depleted 19 — — Si:P on Ge at 350° C. 1,44019 98 2.8 × 10¹⁹ Si:P/SiGe:P/Ge at 390° C. 860 18 66 1.0 × 10²⁰Si:P/SiGe:P/Ge at 350° C. 720 19 52 1.15 × 10²⁰  Si:P/(SiGe:P)₂/Ge at650 18 50 1.3 × 10²⁰ 390° C.Table 1 shows that the sheet resistivity of the phosphorus doped siliconlayer (thickness d of 10 nm) of on silicon substrate is measured to beabout 335Ω/□ with a charge carrier mobility of 31 cm²/Vs and chargecarrier concentration of 5.5×10²⁰ cm⁻³. In the embodiments havingphosphorus doped silicon layer formed on a germanium layer at 390° C.,the charge carriers are completely depleted and the heterostructure actslike it has no charge carrier. When the Ge forming temperature islowered to 350° C., the sheet resistivity is as high as 1440Ω/□.Inserting the phosphorus doped SiGe layer between the phosphorus dopedsilicon layer and the germanium layer formed at 390° C., the interfacialstrain is relaxed and the sheet resistivity is lowered to 860Ω/□. At aGe forming temperature of 350° C. with a phosphorus doped SiGe layer,the sheet resistivity is further decreased to 720Ω/□. With two layers ofphosphorus doped SiGe at the interface of phosphorus doped silicon layerand germanium layer, the sheet resistivity is greatly decreased to avalue close to phosphorus doped silicon on a silicon substrate level,i.e. about 650Ω/□.

Among the samples, epitaxy at 350° C. or at a temperature between 330°C. and 370° C., has a beneficial effect in resistance reduction comparedwith epitaxy at a temperature of 390° C. This result indicates that theuse of one or more interfacial epitaxial layers made of SiGe and/orlowering the Ge layer epitaxy temperature beneficially reduces thecontact resistance. Therefore, the epitaxy temperature of between 330°C. and 370° C., such as 350° C., is applied to any of the interfaciallayers of the embodiments of the present disclosure. Using epitaxy atthese temperatures can be applied to reduce or remove the trap levelsand defects caused by stress provided at the interface, and to reducecontact resistance. The traps block the movement of charge carriers(electron or hole) and remarkably lower electronic device performance.This technique applies to tall and narrow fins such that the contactresistance at the top portion and the sidewall portions of the fin arereduced. The annealing of the first and second interfacial layers 120and 130 can be carried out using a laser, such as an excimer laser at anoutput power of about 1 W. In some embodiments, the laser has awavelength of about 308 nm with a pulse width in a range from 50 to 300ns. The duration of laser annealing depends on the sample dimensions, athick sample, for example, requires a longer time for the annealingprocess. The laser light can be emitted by a laser diode and in a formof a continuous wave (CW) laser or a pulsed laser with adjusted laserpower per pulse to annealing without causing any ablation phenomenon.Laser annealing, however, only reduces the contact resistance at the topportion of a tall and narrow fin in FinFET but not the sidewall portionsor the entire fin of the FinFET. The above technique of using SiGeinterlayers and choosing the temperature of the interface during epitaxyprovides a benefit of reduction of contact resistance of top andsidewall portions of the fin or the entire fin without using laserannealing.

FIG. 34 shows an energy diagram of the silicon and germanium interface.The silicon is doped with phosphorous to increase the number of chargecarriers and to enhance the coupling between the metal contact and thesilicon by inducing more charge carriers to tunnel through the potentialbarrier. In a device with a silicon/germanium interface, when biasvoltage is applied, the phosphorus doped silicon has a Fermi levelE_(F,Si:P) and a conduction band edge E_(C,Si:P) while the germanium hasa Fermi level E_(F,Ge) and a conduction band edge E_(C,Ge). For the bandbending of combining phosphorus doped silicon and germanium, at theinterface of silicon and germanium located at 0 along the distance linex, there are ‘dead pool’ at the silicon side, indicated by label A inFIG. 34, of halted carriers due to effective barrier offset; tunnelingbarrier indicated by label B in FIG. 34, and bounced-back chargecarriers due to reflection/refraction of ‘slow’ charge carriers with lowmobility. The bouncing back of the ‘slow’ carriers is a dominant factorcausing high interfacial resistivity at the silicon-germanium interfaceof the heterostructure. Therefore, reducing the interfacial resistivityon the n-type contact to Ge or SiGe CMOS device improves deviceperformance and an efficient heterostructure or a transistor device,such as a finFET according to the present disclosure, has a low contactresistivity.

In a comparative method, when a silicon layer is formed on a germaniumlayer, a phosphorus doped germanium (Ge:P) prelayer having a thicknessof 0.5 nm-2 nm is grown epitaxially on the germanium layer. Then, aphosphorus doped silicon (Si:P) layer is epitaxially grown on the Ge:Pprelayer or directly on the germanium layer to prevent oxidation of thegermanium layer as the phosphorus doped silicon layer has a function ofa barrier between the germanium and titanium top contact layer,preventing formation of germanium-metal trap states. In this situation,the interface of Si:P and Ge:P can have a lattice mismatch as large as4.2% which is likely to generate trap states and degrade contactresistivity of the silicon-germanium heterostructure. Also, the trapsformed at the interface of silicon and germanium can lead to depletionof the Si:P grown on a planar Ge (as shown in the sheet resistivitymeasurement result of SiGe on Ge at 390° C. in Table 1 above).

In contrast, according to the present embodiments (see Table 1 above),lowering the temperature from 390° C. to 350° C. improves the situationof depletion. Also, inserting epitaxial layer of SiGe reduces theresistance. The epitaxial layer of SiGe functions to reduce theinterfacial traps by making the interface well-defined and organized andadjusting the strain/stress. With a multi-layered structure or asuperlattice of SiGe layers between the bottom Ge layer and the top Si:Player, the resistance can be dramatically reduced, implying a drop ofinterfacial traps. FIGS. 35(a) and 35(b) show the transmission electronmicroscope (TEM) micrographs of samples of the embodiments of thepresent disclosure, demonstrating the effect of temperature on theinterface of germanium and silicon-germanium. FIG. 35(a) shows that theinterface of germanium and silicon-germanium formed at 390° C. is notclearly defined. FIG. 35(b) shows that the interface of germanium andsilicon-germanium formed at 350° C. is clearly defined and organized.Therefore, lowering the temperature during formation of theheterostructure to a temperature of a range between 330° C. and 370° C.,such as 350° C., promotes well-defined interface, organized interfacialstructure, and interfacial properties.

FIG. 36 shows a TEM micrograph of an embodiment of the presentdisclosure showing the interfaces between the phosphorus doped silicon(Si:P) and germanium (Ge) layer. Between the Si:P layer and the Gelayer, there are three interfaces, namely the interface between the Si:Player and a Si_(0.6)Ge_(0.4) interfacial epitaxial layer, the interfacebetween the Si_(0.6)Ge_(0.4) interfacial epitaxial layer and aSi_(0.3)Ge_(0.7) interfacial epitaxial layer, and the interface betweenthe Si_(0.3)Ge_(0.7) interfacial epitaxial layer and the Ge layer. Allthe interfaces are clearly well-defined, showing organized atomicstructures. Each of the interfacial epitaxial layers of Si_(0.6)Ge_(0.4)and Si_(0.3)Ge_(0.7) has a thickness of about 1 to about 3 nm in someembodiments. The sheet resistance of the SiP—SiGe—Ge heterostructure inFIG. 36 is measured to be about 108Ω/□. Compared to the sheet resistanceof 170Ω/□ for SiP—Ge structure, the two interfacial epitaxial layerslargely reduce the contact resistance and enhance the device performanceof a heterostructure or transistor devices having the heterostructure.

The present application discloses an exemplary method of manufacturing aheterostructure in a semiconductor device. The method includesoperations of forming an interfacial epitaxial layer on a germaniumlayer disposed over a substrate, forming a semiconductor layer on theinterfacial epitaxial layer, and forming a conductive layer on thesemiconductor layer. The interfacial epitaxial layer contains germaniumelement and an element from the semiconductor layer, and has a thicknessin a range from about 1 nm to about 3 nm. In one or more of theforegoing or following embodiments, the semiconductor layer is formed ofsilicon. In one or more of the foregoing or following embodiments, thegermanium layer and the semiconductor layer are doped by an n-typedopant including phosphorus. In one or more of the foregoing orfollowing embodiments, the interfacial epitaxial layer is formed ofSixGei-x, where x is a number between 0 and 1. In one or more of theforegoing or following embodiments, the interfacial epitaxial layerincludes at least two stacked layers of Si_(y)Ge_(1-y) overSi_(x)Ge_(1-x), where x and y are between 0 and 1 and satisfy x<y.

The present application also discloses an exemplary method ofmanufacturing a finFET transistor device. The method has operations offorming a fin made of germanium, forming a source/drain epitaxial layeron each of source/drain regions of the fin, and forming a contact layeron the source/drain regions. The source/drain epitaxial layer includes afirst layer on the fin and a second layer on the first layer. The firstlayer includes germanium element and an element from the second layer,and has a thickness in a range from about 1 nm to about 3 nm. In one ormore of the foregoing or following embodiments, the second layer is asilicon layer. In one or more of the foregoing or following embodiments,the first layer is a SixGei-x layer, where x is a number between 0and 1. In one or more of the foregoing or following embodiments, thesecond layer is a Si_(y)Ge_(1-y) layer, where y is a number between 0and 1, and satisfying a relationship of x<y. In one or more of theforegoing or following embodiments, x is equal to 0.3 and y is equal to0.6. In one or more of the foregoing or following embodiments, themethod further includes epitaxy of the formed first and second layers ata temperature in a range from 330° C. to 370° C. In one or more of theforegoing or following embodiments, the first layer is formed by thesame method as the second layer. In one or more of the foregoing orfollowing embodiments, the first layer is formed by a different methodthan the second layer. In one or more of the foregoing or followingembodiments, an interface between the fin and the first layer and aninterface between the first layer and the second layer are well-definedand organized.

The present application discloses an embodiment of a field effecttransistor device having a channel made of germanium and a source/drainportion. The source/drain portion includes a germanium layer, aninterfacial epitaxial layer on the germanium layer, a semiconductorlayer on the interfacial epitaxial layer, and a conductive layer on thesemiconductor layer, and the interfacial epitaxial layer containsgermanium and an element from the semiconductor layer, and has athickness in a range from about 1 nm to about 3 nm. In one or more ofthe foregoing or following embodiments, the semiconductor layer isformed of silicon. In one or more of the foregoing or followingembodiments, the germanium layer and the semiconductor layer are dopedby an n-type dopant including phosphorus. In one or more of theforegoing or following embodiments, the interfacial epitaxial layer isformed of SixGei-x, where x is a number between 0 and 1. In one or moreof the foregoing or following embodiments, the interfacial epitaxiallayer is formed of two stacked layers of SixGei-x of differentcompositions. In one or more of the foregoing or following embodiments,the interfacial epitaxial layer has a composition gradually changingalong a thickness direction of the interfacial epitaxial layer.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a firstinterfacial epitaxial layer disposed over a first semiconductor layerthat is disposed over a substrate, wherein the first semiconductor layercomprises germanium, and wherein the first interfacial epitaxial layercomprises a first combination of germanium and a first element differentfrom germanium; a second interfacial epitaxial layer disposed over thefirst interfacial epitaxial layer, wherein the second interfacialepitaxial layer comprises a second combination of germanium and thefirst element, and wherein an amount of the germanium in the firstcombination is higher than an amount of germanium in the secondcombination; a second semiconductor layer disposed over the secondinterfacial epitaxial layer, wherein the second semiconductor layercomprises the first element, wherein an amount of germanium graduallydecreases in the first and second interfacial epitaxial layers from thefirst semiconductor layer to the second semiconductor layer, and theamount of the first element gradually increases in the first and secondinterfacial epitaxial layers from the first semiconductor layer to thesecond semiconductor layer; wherein the first semiconductor layer underthe first interfacial epitaxial layer consists essentially of germaniumand a first dopant, and the second semiconductor layer over the secondinterfacial epitaxial layer consists essentially of the first elementand a second dopant; and a conductive layer disposed over the secondsemiconductor layer.
 2. The semiconductor device of claim 1, furthercomprising: an interlayer dielectric layer disposed over the secondsemiconductor layer, wherein the conductive layer is disposed in a holeon top of the second semiconductor layer.
 3. The semiconductor device ofclaim 1, wherein the first interfacial epitaxial layer has a thicknessin a range from about 1 nm to about 3 nm.
 4. The semiconductor device ofclaim 1, wherein the first element is silicon.
 5. The semiconductordevice of claim 2, wherein the first and the second semiconductor layersare doped by an n-type dopant including phosphorus.
 6. The semiconductordevice of claim 1, wherein the first interfacial epitaxial layer isformed of Si_(x)Ge_(1-x), where x changes between 0 and
 1. 7. Thesemiconductor device of claim 1, wherein the second interfacialepitaxial layer that is formed over the first interfacial epitaxiallayer is formed of Si_(y)Ge_(1-y) layer, and wherein the firstinterfacial epitaxial layer is formed of Si_(x)Ge_(1-x), where x and ychange between 0 and 1 and satisfy x<y.
 8. A semiconductor device,comprising: a first source/drain interfacial epitaxial layer disposedover each of source/drain regions of a fin that comprises a firstelement, wherein the first source/drain interfacial epitaxial layercomprises a first combination of the first element and a second elementdifferent from the first element; a second interfacial epitaxial layerdisposed over the first source/drain interfacial epitaxial layer,wherein the second interfacial epitaxial layer comprises a secondcombination of the first element and the second element, and wherein anamount of the first element in the first combination is higher than anamount of the first element in the second combination; and a secondsemiconductor layer disposed over the second interfacial epitaxiallayer, wherein an amount of the first element gradually decreases in thefirst source/drain interfacial epitaxial layer and the secondinterfacial epitaxial layer from the fin to the second semiconductorlayer, and the amount of the second element gradually increases in thefirst source/drain interfacial epitaxial layer and the secondinterfacial epitaxial layer from the fin to the second semiconductorlayer; wherein the fin under the first source/drain interfacialepitaxial layer consists essentially of the first element and a dopant,and the second semiconductor layer over the second interfacial epitaxiallayer consists essentially of the second element and a dopant; and acontact layer disposed over the source/drain regions.
 9. Thesemiconductor device of claim 8, wherein the first element is germaniumand the fin is formed of germanium.
 10. The semiconductor device ofclaim 8, wherein the first source/drain interfacial epitaxial layercomprises germanium and the second element and has a thickness in arange from about 1 nm to about 3 nm.
 11. The semiconductor device ofclaim 9, wherein the second element is silicon.
 12. The semiconductordevice of claim 8, wherein the first source/drain interfacial epitaxiallayer is a Si_(x)Ge_(1-x) layer, where x changes between 0 and
 1. 13.The semiconductor device of claim 12, wherein the second interfacialepitaxial layer is a Si_(y)Ge_(1-y) layer, where y changes between 0 and1, and satisfying a relationship of x<y.
 14. The semiconductor device ofclaim 13, wherein an average of x is equal to 0.3 and an average of y isequal to 0.6.
 15. The semiconductor device of claim 8, furthercomprising: a gate structure disposed between source/drain regions ofthe fin.
 16. A semiconductor device, comprising: a first interfacialepitaxial layer disposed over a first semiconductor layer that isdisposed over a substrate, wherein the first semiconductor layercomprises a first element; a second interfacial epitaxial layer disposedover the first interfacial epitaxial layer; a second semiconductor layerdisposed over the second interfacial epitaxial layer, wherein the secondsemiconductor layer comprises a second element; wherein the firstinterfacial epitaxial layer comprises a first combination of the firstelement from the first semiconductor layer and the second element fromthe second semiconductor layer, wherein the second interfacial epitaxiallayer comprises a second combination of the first element from the firstsemiconductor layer and the second element from the second semiconductorlayer, wherein an amount of the first element in the first combinationis higher than an amount of the first element in the second combination,and wherein an amount of the first element gradually decreases in thefirst and second interfacial epitaxial layers from the firstsemiconductor layer to the second semiconductor layer, and an amount ofthe second element gradually increases in the first and secondinterfacial epitaxial layers from the first semiconductor layer to thesecond semiconductor layer, and wherein the first semiconductor layerunder the first interfacial epitaxial layer consists essentially of thefirst element and a dopant, and the second semiconductor layer over thesecond interfacial epitaxial layer consists essentially of the secondelement and a dopant; and a conductive layer disposed over the secondsemiconductor layer.
 17. The semiconductor device of claim 16, whereinthe first element is germanium and the second element is silicon. 18.The semiconductor device of claim 17, wherein the first interfacialepitaxial layer is formed of Si_(x)Ge_(1-x), where x changes between 0and 1, wherein the second interfacial epitaxial layer is formed ofSi_(y)Ge_(1-y), where y changes between 0 and 1, and wherein y>x. 19.The semiconductor device of claim 18, wherein an average of x is equalto 0.3 and an average of y is equal to 0.6.
 20. The semiconductor deviceof claim 16, wherein the first semiconductor layer and the secondsemiconductor layer are doped by an n-type dopant including phosphorus.